fig7

Figure 7. Integrated sensing-memory-computing applications. (A) In-memory NOR/NOT gates in a crossbar via MAGIC^[43]; (B) IMP and NAND logic-in-memory^[9]; (C) Memristor current responses elicited by voltage-pulse stimuli mimic the learning-forgetting-relearning behavior^[85]; (D) Spatiotemporal integration and dynamic logic in an NbO_x neuron^[95]; (E) Flexible memristor-based analog computing architecture^[96]; (F) Artificial somatosensory system (MFSN array + SNN classifier) for tactile simulation, with multimodal (pressure/temperature) firing-rate modulation and temperature-dependent pulse-amplitude modulation^[97]. Reproduced with permission from Ref.^[43]. Copyright 2017, American Chemical Society. Reproduced with permission from Ref.^[9]. Copyright 2020, WILEY-VCH. Reproduced with permission from Ref.^[85]. Copyright 2025, WILEY-VCH. Reproduced from Ref.^[95] under the CC BY license. Reproduced with permission from Ref.^[96]. Copyright 2022, WILEY-VCH. Reproduced with permission from Ref.^[97]. Copyright 2022, WILEY-VCH. NOR: Not OR; MAGIC: memristor-aided logic; IMP: implication; NAND: Not AND; MFSN: multimodal fusion spiking neurons; SNN: spiking neural network; TE: top electrode; BE: bottom electrode; PDMS: polydimethylsiloxane; PET: polyethylene terephthalate.