fig5

Tailoring microstructure engineering to decouple electron-phonon transport in Se-based thermoelectric alloys

Figure 5. Microstructure characterization of the Bi-Se system. (A-C) TEM images at successively higher magnifications: 50, 20, and 5 nm scales; (D-G) Lattice analysis diagrams corresponding to regions A1, X, A2, and A3 in (C), respectively; (H and I) Atomic arrangement and dislocation maps for region I; (J and K) the corresponding maps for region II; (L and M) Additional TEM images at 20 nm and 10 nm scales; (N and O) Lattice analysis diagrams for regions Y1 and Y2 in (M); (P) Additional TEM image at 5 nm scale; (Q and R) Lattice analysis diagrams for regions B1 and Y3 in (P); (S-V) Atomic dislocation maps for region Y1, region Y2, region B1, and region III, respectively. TEM: Transmission electron microscopy.

Microstructures
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