fig9

Numerical simulation and twinning evolution mechanism of the deep through silicon via electroplated copper

Figure 9. Comparison of stacking sequence along [111] direction among the FCC matrix, twins of different thicknesses and 9R structure: (A) stacking sequence above the twin plane of 1-, 3-, 4-, and 6-layer twins, differing from that of the FCC matrix; (B) stacking sequence above the twin plane of 2- and 5-layer twins or above the faulted planes of the 9R structure, matching that of the FCC matrix. The first row of atoms above the topmost twin plane of the twins or above the topmost faulted plane of the 9R structure, along with the corresponding atoms in the matrix, is marked with horizontal dashed lines. FCC: Face-centered cubic.

Microstructures
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