fig4

Numerical simulation and twinning evolution mechanism of the deep through silicon via electroplated copper

Figure 4. Effect of current density on the IPF ||Z of the deep TSV electroplated copper at an additive concentration ratio of 1:10: (A) 0.1 ASD; (B) 0.15 ASD; (C) 0.17 ASD; (D) regional division diagram. IPF: Inverse pole figure; ASD: ampere per square decimeter.

Microstructures
ISSN 2770-2995 (Online)

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