fig2

Numerical simulation and twinning evolution mechanism of the deep through silicon via electroplated copper

Figure 2. Deep TSV electroplated copper: (A) TSV sample; (B) via arrangement; (C) section of TSV; (D) schematic diagram of multi-player material for TSV. TSV: Through silicon via.

Microstructures
ISSN 2770-2995 (Online)

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/