fig2

Multicomponent porous metal oxide semiconductors for advanced gas sensing

Figure 2. (A) Schematic of the electron depletion layer theory. Mechanistic representation of acetone sensing by an n-type MOS sensor (A1); Initial electronic levels (A2); Changes in the electronic levels of n-type MOS upon exposure to oxygen (A3) and target gases (A4). Figure 2A is quoted with permission from Panigrahi et al.[37]; (B) Core-shell configuration of p-type MOS in vacuum and air (B1); Interaction of p-MOS in the presence of reducing gas CO (B2) and in oxidizing NO2 (B3). Figure 2B is quoted with permission from Kaur et al.[38]; (C) Schematic illustration of gas diffusion processes at different pore sizes; (D) Schematic representation of gas diffusion processes within hollow tin dioxide microspheres at different temperatures. Figure 2C and D is quoted with permission from Wang et al.[34]. MOS: Metal oxide semiconductor.