fig5

Figure 5. The strain distribution of the hollow structure and physical properties of Si₃N₄ ceramics. (A) HRTEM graph of the sample SEu-5 (the inset shows the corresponding FFT pattern). (B) Geometric Phase Analysis (GPA) mapping, derived from Digital Micrograph calculations, illustrates the overall strain field at a nanoscale. The color scale signifies the change in strain intensity, ranging from -30% (compressive) to +30% (tensile). (C) The profile of the white-dashed arrow in (B). (D) Physical performance of different ceramic materials with dielectric loss (tanδ), thermal conductivity (k), density (ρ), fracture toughness (K_IC), flexural strength (σ) and hardness (H) for referenced ZrO₂ ceramics, referenced Al₂O₃ ceramics and referenced Si₃N₄ ceramics plotted as a radar map: The performance of Si₃N₄ ceramics is outstanding. (E) Physical performance for referenced Si₃N₄ ceramics and the sample SEu-5: The sample SEu-5 exhibits better physical properties. The references for the physical properties of all ceramics in (D and E) are listed in the Supplementary Materials.