fig4

Figure 4. Memristive performance of the ACNT/Al system. (A) I-V curves obtained at different electrolyte concentrations (0.3 V/s), showing the most pronounced hysteretic behavior at 10 mM KCl; (B) I-V curves measured within various voltage ranges (10 mM KCl, 0.3 V/s), all exhibiting hysteretic loops when the voltage range exceeds ± 1 V; (C) I-V curves under ± 1.5 V at different scan rates; (D) The schematic of data processing for the hysteretic I-V loops below the cross-point in (E) and (F); (E) The current differences (ΔI) between forward and reverse scans at the same voltage at different scan rates; (F) The corresponding loop areas (P_hys) at different scan rates. ACNT/Al: Al and CNT array-based aluminum; Al: aluminum; CNT: carbon nanotube; I-V: current-voltage.