fig1

Electron-donor/-acceptor ratio-guided molecular engineering for buried interface optimization in n-i-p perovskite solar cells

Figure 1. Material properties. Molecular structure and side view of (A) AA, (B) ABA, and (C) DBA. Calculated ESP of (D) AA, (E) ABA, and (F) DBA; (G) Solution states of AA, ABA, and DBA; (H) Lattice imperfections and surface states of SnO2 surfaces; (I) Schematic illustration of passivation at the SnO2/perovskite interface using AA, ABA, and DBA. CB: Conduction band; VB: valence band; ITO: indium tin oxide.

Energy Materials
ISSN 2770-5900 (Online)
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